RESEARCH PROCESS PLASMA ETCHING SIO2 MEMBRANE
نویسندگان
چکیده
منابع مشابه
Investigations of surface reactions during C2F6 plasma etching of SiO2 with equipment and feature scale models
During fluorocarbon plasma etching of SiO2 , a polymer passivation layer is generally deposited on the surface of the wafer. The polymer layer regulates the etch by limiting the availability of activation energy and reactants, and providing the fuel for removal of oxygen. To investigate these processes, a surface reaction mechanism for fluorocarbon plasma etching of SiO2 has been developed. The...
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ژورنال
عنوان ژورنال: Herald of Dagestan State Technical University. Technical Sciences
سال: 2014
ISSN: 2073-6185
DOI: 10.21822/2073-6185-2014-35-4-56-62